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November 2013
FDB28N30
N-Channel UniFET TM MOSFET
300 V, 28 A, 129 m Ω
Features
? R DS(on) = 108 m Ω (Typ.) @ V GS = 10 V, I D = 14 A
? Low Gate Charge (Typ. 39 nC)
? Low C rss (Typ. 35 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? Uninterruptible Power Supply
? AC-DC Power Supply
D
D
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDB28N30
300
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
28
19
V
A
I DM
Drain Current
- Pulsed
(Note 1)
112
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
588
28
25
4.5
250
2.0
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
Thermal Characteristics
Symbol
Parameter
FDB28N30
Unit
R θ JC
R θ JA
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (1 in 2 Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
0.5
40
62.5
o
C/W
?2007 Fairchild Semiconductor Corporation
FDB28N30 Rev. C1
1
www.fairchildsemi.com
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